GSM2219Y
20V Dual P-Channel
MOSFETs
Product Description
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Packages & Pin Assignments
GSM2219YX7F (SOT-563)
Features
-20V, -400mA, RDS(ON)=600mΩ@VGS=-4.
5V Fast switching Suit for -1.
5V Gate Drive Applications Green Device Available SOT-563 package design
Applications
Notebook Load Switch Networking Han...