GSM2307P
20V P-Channel
MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
-20V, -6.
5A, RDS(ON)=26mΩ@VGS=-4.
5 Improved dv/dt capability Fast switching Suit for -1.
8V Gate Drive Applications Green Device Available SOT-23-6L package design
Applications
Notebook Load Switch Networking
Packages & Pin Assignments
GSM2307PR...