GSM2312P
20V N-Channel
MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
20V, 6.
7A, RDS(ON)=19mΩ@VGS=4.
5V Improved dv/dt capability Fast switching Suit for 1.
8V Gate Drive Applications Green Device Available SOT-23 package design
Applications
Notebook Load Switch Hand-Held Instruments
Packages & Pin Assignments
GSM2...