GSM2354
100V N-Channel Enhancement Mode
MOSFET
Product Description
GSM2354, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) ,low gate charge.
These devices are particularly suited for low
voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/3.
2A,RDS(ON)=145mΩ@VGS=10V 100V/2.
6A,RDS(ON)=160mΩ@VGS=4.
5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23-3L package design
Applications
DC/DC Converters Load S...