30V N-Channel Enhancement Mode
MOSFET
Product Description
GSM3025S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
30V/9.
0A,RDS(ON)=32mΩ@VGS=10V 30V/7.
0A,RDS(ON)=36mΩ@VGS=4.
5V 30V/5.
0A,RDS(ON)=42mΩ@VGS=2.
5V Super high density cell design for extremely
low RDS (ON) TO-252-2L package design
Applications
DC/DC Converter Load Switch / CCFL Inverter Power Management in Notebook Computer
Packages & Pin Assignments
GSM3025SDF (TO-252-2L)
GSM302...