GSM8412
100V N-Channel Enhancement Mode
MOSFET
Product Description
GSM8412, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Packages & Pin Assignments
GSM8412XF (SOT-223)
Features
100V/3.
6A,RDS(ON)=300mΩ@VGS=10V 100V/3.
0A,RDS(ON)=310mΩ@VGS=4.
5V Super high density cell design for extremely
low RDS (ON) SOT-223 package design
Applications
Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AC/DC Inverter S...