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ISSUED DATE :2005/08/31 REVISED DATE :
GSM BT 5551
Description Features
NP N EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT5551 is designed for general purpose applications requiring high breakdown
voltage.
High Collector-Emitter Breakdown
Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5401
Package Dimensions
REF.
A A1 A2 D E HE
Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40
REF.
L1 L b c e Q1
Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base V...