GSMD18N20
200V N-Channel
MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
200V, 18A, RDS(ON)=140mΩ@VGS=10V Improved dv/dt capability Fast switching VGS Guaranteed ±25V Green Device Available TO-252-2L package
Applications
LED Backlight & Lighting UPS High
Voltage Switching Motor Drive Applications
Packages & Pin ...