GSMDC3907Z
30V P-Channel Enhancement Mode
MOSFET
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Packages & Pin Assignments
GSMDC3907ZFF (DFN3X3-8L)
Features
-30V, -30A, RDS(ON)=17mΩ@VGS=-10V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability Suit for -4.
5V Gate Drive Applica...