GSMDS3710
30V N+P Dual Channel
MOSFETs
Product Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Packages & Pin Assignments
GSMDS3710SF (SOP-8)
Features
N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V
P-Channel -30V, -6.
5A, RDS(ON)=28mΩ@VGS=-10V
Fast switching Suit for 4.
5V / -4.
5V Gate Drive Applications Green Device Available SOP-8 package desig...