GSMDS3807
30V Dual P-Channel
MOSFETs
Product Description
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
-30V, -7A, RDS(ON)=23mΩ@VGS=-10V Improved dv/dt capability Fast switching Suit for -4.
5V Gate Drive Applications Green Device Available SOP-8 package design
Applications
MB / VGA / Vcore Load Switch LED Applications POL Applications...