com
Pb Free Plating Product
ISSUED DATE :2005/11/16 REVISED DATE :
GSS9980
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
80V 52m 4.
6A
The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Description
Features
*High Breakdown
Voltage *Low Gate Change *Single Drive Requirement
Package Dimensions
REF.
A B C D E F
Millimeter Min.
Max.
5.
80 4.
80 3.
80 0° 0.
40 0.
19 6.
20 5.
00 4.
00 8° 0.
90 0.
25
REF.
M H L J K G
Millimeter Min.
Max.
0.
10 0.
25 0.
35 0.
49 1.
35 1.
75 0.
375 REF.
45° 1.
27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuou...