HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: MOS200504 Issued Date : 2005.
05.
01 Revised Date : 2005.
09.
28 Page No.
: 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage-blocking capability without degratding performance over time.
In addition, this advanced
MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well sui...