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HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: MOS200404 Issued Date : 2004.
07.
01 Revised Date : 2005.
09.
28 Page No.
: 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
H04N60 Series Pin Assignment
Tab
Description
This advanced high
voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high
voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
1 2 3
3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Features
• High...