Shantou Huashan Electronic Devices Co.
,Ltd.
NPN S I LI C O N T R AN S I S T O
H1008
█
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………800mW VCBO——Collector-Base
Voltage………………………………80V VCEO——Collector-Emitter
Voltage……………………………60V VEBO——Emitter-Base
Voltage………………………………8V IC——Collector Current……………………………………700mA
TO-92
1―Emitter,E 2―Base,B 3―Collector,C
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO
fT Cob
Characteristics
Collector Cut-off Current
Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation
Voltage Base...