HI-SINCERITY MICROELECTRONICS CORP.
H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6210 Issued Date : 1998.
02.
01 Revised Date : 2005.
01.
20 Page No.
: 1/5 Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature .
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-55 ~ +150 °C Junction Temperature .
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+150 °C Maximum • Maximum Power Dissipation Tota...

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