HI-SINCERITY MICROELECTRONICS CORP.
H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.
No.
: HE6203 Issued Date : 1992.
09.
22 Revised Date : 2005.
01.
20 Page No.
: 1/5 Description The H2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features • Complements to NPN Type H2N5551 • High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .
.
.
-55 ~ +150 °C Junction Temperature ...

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