H5N1503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0186-0100Z Rev.
1.
00 Mar.
10.
2004
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
1.
Gate 2.
Drain (Flange) 3.
Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to Source
voltage Gate to Source
voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote...