Part Number
|
H5N2508DS |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N Channel MOS FET High Speed Power Switching |
Published
|
Nov 20, 2008 |
Detailed Description
|
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2...
|
Datasheet
|
H5N2508DS
|
Overview
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1108-0200 (Previous: ADE-208-1377) Rev.
2.
00 Sep 07, 2005
Features
com • Low
• Low on-resistance: R DS (on) = 0.
48 Ω typ.
leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.
5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.
2.
00 Sep 07, 2005 page 1 of 7
H5N2508DL, H5N2508DS
A...
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