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H5N3004P
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1523 (Z) Rev.
0 Apr.
2002 Features
• Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) • Avalanche ratings
Outline
TO-3P
D
G
1
S
2
3
1.
Gate 2.
Drain (Flange) 3.
Source
H5N3004P
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Absolute Maximum Ratings
(Ta=25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at T...