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H5N3007CF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0473-0100 Rev.
1.
00 Nov.
11.
2004
Features
• • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode
Outline
TO-220CFM
D
G
1.
Gate 2.
Drain 3.
Source
1 S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS I...