H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1382 (Z) Target Specification 1st.
Edition Mar.
2001 Features
• • • • • •
Low on-resistance: R DS(on) = 0.
064 typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ
Outline
TO-3PL
w
w
.
D w
G
t a
D S
S a
1 2
e h
3
t e
U 4
.
c
m o
1.
Gate 2.
Drain (Flange) 3.
Source
w
w
w
.
D
a
S a t
e e h
U 4 t
m o .
c
H5N5005PL
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to ...