H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z) 5th.
Edition May 2002 Features
• Low on-resistance RDS(on) =4.
6 mΩ typ.
• Low drive current • 4.
5 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4 D
4
G 1 S 2
1
2
3
1
2
H7N0307LS
3
3
H7N0307LM 1.
Gate 2.
Drain 3.
Source 4.
Drain
H7N0307LD
H7N0307LD, H7N0307LS, H7N0307LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel to Ambient Thermal Impedance Channel temperature Storage temperature ...