REPLACEMENT TYPE : MMBT2222A
FEATURES Epitaxial Planar Die Construction Complementary PNP Type available(HABT2907A)
HABT2222A(NPN)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base
Voltage
VCBO
75 V
Collector-Emitter
Voltage
VCEO
40 V
Emitter-Base
Voltage
VEBO
6V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation
PC
Thermal Resistance Junction to Ambient RθJA
300 mW 417 °C /W
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55 to +150 °C
SOT-23 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collec...