HAF2007(L), HAF2007(S)
Silicon N Channel MOS FET Series Power Switching
Target specification ADE-208-706 (Z) 1st.
Edition Dec.
1998
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area.
And this circuit operation to shut–down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0
voltage recovery)
Outline
DPAK–2
2, 4 D ...