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HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.
4.
00 Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• • • • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0
voltage recovery)
Outline
RENE...