HAF2015RJ
Silicon N Channel MOS FET Series Power Switching
REJ03G1141-0300 Rev.
3.
00
Aug 27, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (5 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Temperature hysteresis type.
• High density mounting.
Outline
RENESAS Package code: PRSP0008DD-A (Packag...