HAF2026RJ
Silicon N Channel Power MOS FET Power Switching
REJ03G1255-0200 Rev.
2.
00 Jun 02, 2006
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features
• • • • • Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0
voltage recovery) Built-in the current limitation circuit
...