HAT2051T
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-661A (Z) 2nd.
Edition February 1999 Features
• • • • Low on-resistance Capable of 2.
5 V gate drive Low drive current High density mounting
Outline
TSSOP–8
65 34
87
1 D
8 D
12
4 G
5 G
S S 2 3
S S 6 7
MOS1
MOS2
1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate
HAT2051T
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 Note3 Note1
Ratings 30 ± 10 1 4 1 0.
8 1.
2 150 ...