HAT2170H
Silicon N Channel MOS FET Power Switching
Features
• High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 3.
3 mΩ typ.
(at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
4 G
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR...