HAT2175H
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 33 mΩ typ.
(at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0006-0400 Rev.
4.
00
Sep 20, 2005
1, 2, 3 Source 4 Gate 5 Drain
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tch = 25°C,...