com
HAT2265H
Silicon N Channel Power MOS FET Power Switching
Rev.
0.
00 Sept.
2004
Features
• High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.
5 mΩ typ.
(at VGS = 10 V) • Lead Free
Outline
LFPAK
5
5 D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5 Drain
S S S 1 2 3
Rev.
0.
00, Sept.
2004, page 1 of 5
com
HAT2265H
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage t...