HAT2299WP
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
5 678 D DDD
4
4 32 1
G
REJ03G1528-0100 Rev.
1.
00
Mar 20, 2007
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tc = ...