HAT3010R
Silicon N/P Channel Power MOS FET High Speed Power Switching
ADE-208-1402F (Z) 7th.
Edition Feb.
2002 Features
• Low on-resistance • Capable of 4.
5 V gate drive • High density mounting
Outline
SOP-8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch
com
com
HAT3010R
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse) IDR Pch Pch Tch Tstg
Note2 Note3 Note1
Unit Pch –60 ...