HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: HE6830 Issued Date : 1994.
01.
25 Revised Date : 2005.
04.
18 Page No.
: 1/4
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.
Feature
• Collector current capability IC=-800mA • Collector-emitter
voltage VCEO(max)=-45V • General purpose switching and amplification • NPN complement: HBC817 series • Pb-Free Package is available
SOT-23
Absolute Maximum Ratings
Characteristic Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current-Continuous Total Device Dissipation (TA=25oC) Total Device Diss...