HCD65R600S_HCU65R600S
June 2015
HCD65R600S / HCU65R600S
650V N-Channel Super Junction
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ = 0.
54 ȍ
ID = 7.
3 A
D-PAK I-PAK
2
1 1
32 3
HCD65R600S HCU65R600S 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Dr...