HCD70R1K4P
HCD70R1K4P
700V N-Channel Super Junction
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 1.
15 ȍ(Typ.
) @VGS=10V 100% Avalanche Tested
Mar 2016
BVDSS = 700 V RDS(on)Typ ȍ ID = 4.
0 A
D-PAK
2
1
3 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC =...