HCS12NK65V
Apr 2014
HCS12NK65V
650V N-Channel Super Junction
MOSFET
BVDSS = 650 V RDS(on) typ = 0.
34 ȍ ID = 12 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.
) @VGS=10V 100% Avalanche Tested RoHS Compliant
TO-220F
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– ...