HCU7N70S
HCU7N70S
700V N-Channel Super Junction
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
95 ȍ 7\S #9GS=10V 100% Avalanche Tested
Sep 2014
BVDSS = 700 V RDS(on) typ = 0.
95 ȍ ID = 5.
0 A
I-PAK
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
...