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HE7601SG
GaAlAs Infrared Emitting Diode
ODE-208-996B (Z) Rev.
2 Mar.
2005 Description
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure.
It is suitable as a light source for optical control devices and sensors.
Features
• High efficiency and high output power
Package Type • HE7601SG: SG1 Internal Circuit
1
2
HE7601SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse
voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward v...