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HFD1N80

Part Number HFD1N80
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEA...
Datasheet HFD1N80





Overview
HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.
5 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.
) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N80 1 2 3 3 HFU1N80 1.
Gate 2.
Drain 3.
Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current – C...






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