HFD1N80 / HFU1N80
April 2006
HFD1N80 / HFU1N80
800V N-Channel
MOSFET
BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.
0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 13 Ω (Typ.
) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N80
1 2 3
3
HFU1N80
1.
Gate 2.
Drain 3.
Source
D
G
S
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-Source
Voltage
Drain Current Drain Current
– C...