HFD2N60S_HFU2N60S
March 2014
HFD2N60S / HFU2N60S
600V N-Channel
MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1.
9 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N60S
1
2 3
HFU2N60S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Contin...