HFD3N80

HFD3N80/HFU3N80 Dec 2005 HFD3N80/HFU3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 2.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area ...