HFD5N60S_HFU5N60S
Sep 2009
HFD5N60S / HFU5N60S
600V N-Channel
MOSFET
BVDSS = 600 V RDS(on) typ = 2.
0 ȍ ID = 4.
3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 2.
0 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD5N60S
1
2 3
HFU5N60S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuo...