Shantou Huashan Electronic Devices Co.
,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power
MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 4.
5A, 600V(See Note), RDS(on) 2.
5Ω@VGS = 10 V • Fast switching • 100% avalanche tested •...