Shantou Huashan Electronic Devices Co.
,Ltd.
HFP17N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power
MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for low
voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 17A, 100V, RDS(on) 70mΩ@VGS = 10 V • High density cell design for ultra low Rdson • ...