HFP4N60F
July 2015
HFP4N60F
600V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 2.
6 ȍ7\S#9GS=10V 100% Avalanche Tested
BVDSS = 600 V RDS(on) typ ȍ ID = 4 A
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)...