Shantou Huashan Electronic Devices Co.
,Ltd.
HFP640
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These power
MOSFETs is designed for high
voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment
TO-220
█ Features
1- G 2-D 3-S
• 18A,200V,RDS(on) 0.
18Ω@VGS =10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF640
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temp...