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Shantou Huashan Electronic Devices Co.
,Ltd.
HFP730
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
these power
MOSFETs is designed for high
voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220
█ Features
5.
5A, 400V, RDS(on) 1.
0Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF730
•
1- G 2-D 3-S
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
T stg —— Storage Temperature ------------------------------------------------------ - 55~150 ℃ T j...