HFP7N60
HFP7N60
600V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
96 Ω (Typ.
) @VGS=10V
Dec 2005
BVDSS = 600 V RDS(on) typ = 0.
96 Ω ID = 7.
0 A
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source
Voltage
...